Alliance Memory has expanded its high-speed CMOS mobile low-power SDRAMs with a new LPDDR4X device featuring on-chip ECC. Providing an extension to the company’s fourth-generation LPDDR4 SDRAMs, the 8Gb AS4C256M32MD4V-062BAN offers -50% lower power ratings in the 200-ball FBGA package for higher power efficiency.
With a low-voltage operation of 0.6V, compared to 1.1V for LPDDR4 SDRAMs, this device extends battery life in portable electronics for the commercial, consumer, and industrial markets, including smartphones, smart speakers, and other IoT devices using AI and 5G technologies.
Providing increased efficiency for advanced audio and ultra-high-resolution video in embedded applications, the SDRAM gives fast clock speeds of 1.6GHz for remarkably high transfer rates of 3.2Gbps. For automotive applications, including ADAS systems, the AEC-Q100-qualified devices function over a temperature range of -40C to +105C.
The solution is organised as two channels per device, with individual channels comprising eight banks of 16 bits. The component provides fully synchronous operation; programmable read and write burst lengths of 16, 32, and on the fly; and selectable output drive strength. An on-chip temperature sensor controls the self-refresh rate.
This SDRAM offers a reliable drop-in, pin-for-pin-compatible replacement for many similar solutions in high-bandwidth, high-performance memory system applications, removing the necessity for costly redesigns and part requalification.